The equipment integrated three technology of DC magnetron sputtering, middle frequency sputtering and electric arc ion evaporation, combining the linear ionize source and pulse bias coating to thin the deposition particles. The various film performance are improved, and be able to coat alloy film, compound film, multilayer composite film on the surface of metal as well as nonmetal. After years of dedicated R&D by our engineer, through unique cathode electric arc ion and unbalanced magnetron systems, we develop a package of PROPOWER series of computer automatic control system. It makes the coating film adhesion density as well as good complex consistency, and solve the problems of the complexity of the manual operation, film color inconsistencies, etc.
Characteristic: 1. The principle of magnetron sputtering is based on the cathode glow discharge theory, expanding the cathode surface magnetic field close to the surface of workpiece, to increased the ionized rate of sputtering atoms. It retains the delicate of the magnetron sputtering and increased the glossiness.
2.The performance of electric arc plasma evaporation source is reliable, be able to work under the current 30A when optimize the cathode and magnetic field structure coating, and the coating film and substrate interface produce atomic diffusion, plus the feature of the ion beam assisted deposition.
Applied industry: The equipment is widely used in IPG clocks, IPS watches and clocks, guns IP, mobile phone shell, hardware, sanitary ware, cutters, anti-friction tools, dies and mould, etc. It can coat TiN, TiCN, CrN, TiALN, TiNbu, TiCrN, ZrN, and various kinds of diamonds film (DLC).

Mode
Dimension JTZ-800 JTZ-1000 JTZ-1250
800*1000mm 1000*1000mm 1250*1100mm

Coating mode and main confirguration Six multi-arc targets + one set of column targets + one set of plane rectangle magnetron sputtering targets
Eight multi-arc targets + a pair of twin (MF)magnetron sputtering targets Twelve multi-arc targets + two sets of plane rectangle magnetron sputtering targets+ a pair of twin (MF)magnetron sputtering targets
Power source Electric arc power, DC magnetron power, MF magnetron power, filament power, pulse power, linear ionized source.
Process gas control Quality flowmeter + electromagnetism ceramic valve
Vacuum chamber structure Vertical single(side) door, pump system postposition, double water-cooling
Vacuum system Molecule pump +Roots pump +Mechanical pump(5.0*10-5Pa)
Diffusion pump +Roots pump +Mechanical pump(5.0*10-4Pa)
Workpiece baking temperature
Normal temperature to 350 centi-degree PID control, radiation heating.
Workpiece motion mode Public rotation Frequency control: 0-20 rotation per minute
Measure mode Number display composite vacuum gauge: from atmosphere to 1.0*10-5Pa
Control mode Manual/Automatic/PC/PLC + HMI/PC four choice of control mode
Remark We can design the dimension of the equipment according to customer��s special technique requirement.